2SB945 transistor equivalent, silicon pnp power transistor.
*Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A
*Good Linearity of hFE
*Large Collector Current IC
*Complement to Type 2SD1270
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
A.
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